Cheng H-W – TechConnect Briefs

On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

Li Y., Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chang H-T, National Chiao Tung University, TW

Abstract – In this work, we statistically study characteristic fluctuation of 16-nm-gate high-/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-k/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs [...]

Random Work Function Induced DC Characteristic Fluctuation in 16-nm High-k/Metal Gate Bulk and SOI FinFETs

Su H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Chen C-Y, Chen Y-Y, Cheng H-W, Cheng H-W, Chang H-T, Li Yiming, National Chiao Tung University, TW

This work studies the metal gate’s work function fluctuation induced DC characteristic fluctuation in the 16-nm bulk and silicon-on-insulator (SOI) fin-type field effect transistor (FinFET) devices using an experimentally calibrated 3D device simulation. The method [...]

Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-/Metal Gate Bulk FinFETs

Cheng H-W, Chiu Y-Y, Lee Y-H, Li Y., National Chiao Tung University, TW

High-/metal gate (HKMG) is one of key technologies for sub-45-nm generations in nano-CMOS era [1-2]. However, using HKMG may introduce random work functions (WKs) on device’s metal gate due to various metal grain orientations [3-5]. [...]

Electrical Characteristics of 16-nm-Gate Multi-Gate-and-Multi-Fin Devices and Digital Circuits

Cheng H-W, National Chiao Tung University, TW

In this work, we estimate electrical characteristics including threshold voltage (Vth) and gate capacitance (Cg) of 16-nm-gate multi-gate-and-multi-fin FETs, and delay time of an inverter and static noise margin (SNM) of a 6T SRAM. Large-scale [...]

Hydrothermal Growth of ZnO Nanostructures Using Zinc Thin Films as Seed Layer

Yang J-Y, Cheng H-W, Cheng T.-C., Cheng H-W, Cheng T.-C., Li Y., National Chiao Tung University, TW

Different zinc oxide nanostructures are selectively synthesized by a simple reaction of zinc acetate dihydrate with hexamethyltetramine (HMT) under mild hydrothermal conditions using zinc thin films as seed layer. Scanning electron microscopy (SEM) result of [...]

Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio

Cheng H-W, Hwang C-H, Li Y., National Chiao Tung University, TW

For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]

Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices

Hwang C-H, Cheng H-W, Yeh T-C, Li T-Y, Li Y., Huang H.M., Li T-Y, Li Y., National Chiao Tung University, TW

Impact of the intrinsic fluctuations on device characteristics, such as the threshold voltage (Vth) fluctuation is crucial in determining the behavior of nanoscale semiconductor devices. The fluctuations are pronounced for continuously shrunk CMOS devices. To [...]