Carroll R. – TechConnect Briefs

A Scalable POWER MOSFET Model with an Integrated Body-Diode Including Reverse Recovery

Luo Z., Hall J., Xiao Y., Young A., Carroll R., Connerney D., Fairchild Semiconductor, US

Traditional high-voltage MOSFET models include parasitic source-bulk and drain-bulk diode models. However, these models are simplified diode models and lack some of the more detailed aspects of p-n junctions diodes such as breakdown voltage, advanced [...]

Modeling Snapback and Rise-time Effects in TLP Testing for ESD MOS Devices using BSIM3 and VBIC Models

Zhou Y., Connerney D., Carroll R., Luk T., Fairchild Semiconductor, US

A simple SPICE macro model has been created for ESD MOS modeling. The model consists of standard components only. It includes a MOS transistor modeled by BSIM3v3, a bipolar transistor modeled by VBIC, and a [...]