Besse P.A. – TechConnect Briefs

Simulation of the Piezo-Tunnel Effect

Friedrich A.P., Besse P.A., Bächtold M., Popovic R.S., Swiss Federal Institute of Technology of Lausanne, CH

We present a new model of the piezo-tunnel effect in a heavily doped silicon p-n junction. Our approach is based on the coupling of a strain-dependent description of the energy exterma in the valence and [...]

Modelling an NMR Probe for Magnetometry

Boero G., Schlaefli D., Besse P.A., Popovic R.S., Swiss Federal Institute of Technology, CH

A model of an NMR magnetometer probe head, based on the Bloch equations, has been developed and implemented in a C-program. The program permits to simulate pulsed and continuous wave NMR experiments with a probe [...]

Analytical Study of Vertical Hall (VH)-Devices Using an Adapted Conform Mapping Technique

Besse P.A., Schott C., Popovic R.S., EPFL, CH

We adapt the conforrn mapping technique to the analytical calculation of two dimensional vertical Hall (VH)-devices with five electrical contacts. With our new method the finite size of the two output current electrodes is taken [...]

Simulations of a New CMOS Compatible Method to Enhance the Breakdown Voltage of Highly-Doped Shallow PN Junctions

Pauchard A., Besse P.A., Popovic R.S., EPFL, CH

Avalanche breakdown often limits the working range of planar junction diodes in electronic circuits and in sensors. We present two-dimensional device simulation results (using MEDICI) of a novel CMOS compatible structure. It combines a floating [...]