Bendix P. – TechConnect Briefs

Application of Genetic Algorithm to Compact Model Parameter Extraction

Cai X., Wang H., Gu X., Gildenblat G., Bendix P., Penn State University, US

The total number of model parameters in compact MOSFET models is usually between 50 and 300, necessitating an elaborate extraction process. Gradient-based optimization techniques were found to be useful but somewhat limited in their scope. [...]

Detailed Comparison of the SP2001, EKV, and BSIM3 Models

Bendix P., LSI Logic, US

Practical comparisons are made of three available or soon to be available compact MOS models----SP2001 (surface potential 2001), EKV, and BSIM3. They are compared both in their DC and AC quality of fits to measured [...]