Universitat Bremen – TechConnect Briefs

DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations

Neinhus B., Jungemann C., Meinerzhagen B., Universitat Bremen, DE

An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ [...]

Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs

Jungemann C., Nguyen C.D., Decker S., Meinerzhagen B., Universitat Bremen, DE

An improved version of the modified local density approximation is presented which correctly describes the impact of size quantization on the threshold voltage and capacitance of state-of-the-art NMOSFETs with very thin oxides for temperatures from [...]