Indian Institute of Technology Kanpur

Suppression of Variability in Metal Source/Drain SOI MOSFET with Partial Buried Oxide and δ-doping

Patil G.C., Qureshi S., Indian Institute of Technology Kanpur, IN

Recently, metal source/drain (S/D) dopant-segregated Schottky barrier (DSSB) SOI MOSFET has attracted the attention of researchers due to its planar structure, CMOS compatibility and reduced S/D series resistance at thin SOI film. However, employing dopant-segregation [...]

Multiferroic StTiO3/BiFeO3 Superlattice:Theory and Experiment

Roy A., Garg A., Prasad R., Auluck S., Indian Institute of Technology Kanpur, IN

Materials designing using the concept of artificial layered structures has opened up a new vista in process engineering owing to the possibility of evolving unusual and novel functional properties which are often not found in [...]

Underlap Channel Nanoscale Dopant Segregated Schottky Barrier SOI MOSFET for Low Power Mixed Signal Circuits

Patil G.C., Qureshi S., Indian Institute of Technology Kanpur, IN

In this paper, nanoscale dopant segregated Schottky barrier (DSSB) SOI MOSFET with underlap channel has been proposed for low power mixed signal circuit applications. The results show that, due to underlap lengths at both source/drain [...]

Glass Transition Temperature of High Molecular Weight Polystyrene: Effect of Particle Size, Bulk to Micron to Nano

Paik P., Kar K.K., Indian Institute of Technology Kanpur, IN

High Molecular weight nano/micron sized polystyrene (Mv=1X106) was prepared by styrene and hydrogen peroxide. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) measurements indicated that the particles matched with that of the polymer single [...]