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HomeAffiliationsFairchild Semiconductor

Affiliations: Fairchild Semiconductor

An SOA Aware MOSFET Model for Highly Integrated, Analog Mixed-Signal Design Environments

Hall J., Luo Z., Xiao Y., Young A., Connerney D., Fairchild Semiconductor, US
Circuit simulations involving power devices often require additional checks comparing with generic low power applications. The burden lies with the individual designers to ensure that the power transistors are operating well within the Safe Operating [...]

A Scalable POWER MOSFET Model with an Integrated Body-Diode Including Reverse Recovery

Luo Z., Hall J., Xiao Y., Young A., Carroll R., Connerney D., Fairchild Semiconductor, US
Traditional high-voltage MOSFET models include parasitic source-bulk and drain-bulk diode models. However, these models are simplified diode models and lack some of the more detailed aspects of p-n junctions diodes such as breakdown voltage, advanced [...]

Compare and Contrast HiSIM-LDMOS and BSIM based compact model of High Voltage MOSFETs for Analog Applications

Young A., Hall J., Luo Z., Xiao Y., Connerney D., Fairchild Semiconductor, US
A pair of scalable spectre models, one utilizes the Surface Potential based HiSIM-LDMOS model, and the other, the conventional Vth-based BSIM3v3 model, were extracted based on a test vehicle designed with both Drain-Extended CMOS and [...]

Modeling Snapback and Rise-time Effects in TLP Testing for ESD MOS Devices using BSIM3 and VBIC Models

Zhou Y., Connerney D., Carroll R., Luk T., Fairchild Semiconductor, US
A simple SPICE macro model has been created for ESD MOS modeling. The model consists of standard components only. It includes a MOS transistor modeled by BSIM3v3, a bipolar transistor modeled by VBIC, and a [...]

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