US – Page 331 – TechConnect Briefs

Developing PbSe/PbS Core-Shell Nanocrystals Quantum Dots (NQDs) for Light Emitting NQD/Silicon Heterojunctions

Xu J., Xu S., Cui D., Xu J., Xu S., Paradee G., Zhang F., Zhu T., Pennsylvania State University, US

In order to incorporate infrared colloidal nanocrystal quantum dots into silicon matrix to develop silicon-based light emitters, we report in this paper the epitaxial growth of PbS shells over PbSe NQDs with monolayer precision. The [...]

Numerical Modeling of Nanoscale Silicon Photodetectors that Use Electromagnetic Resonance Modes to Enhance Performance

Crouse D., Keshavareddy P., The City College of New York, US

Several high responsivity, high bandwidth, low bit error ratio (BER) nanoscale Si photodetectors are modeled including metal-semiconductor-metal photodetectors (MSM-PD), MSM-PDs fabricated on silicon-on-insulator substrates, and avalanche photodiodes. The authors have analyzed surface plasmons and other [...]

Raman and Photoluminescence Spectroscopy Investigations of ZnO Nanostructures

Chen B., Chen C., Ng H.T., Chen B., Chen C., NASA Ames Research Center, US

One-dimensional inorganic nanowires are expected to play important roles in optoelectronic device applications. The unique properties such as grain boundary and high surface area of these nanostructures are clearly different from the corresponding bulk material. [...]

Debunking an Urban Legend: Uniformity in Edge-Lit Frustrated TIR Displays

Selbrede M.G., Uni-Pixel Displays, Inc., US

Field sequential color display systems that utilize frustrated total internal reflection to activate pixels offer tremendous advantages over existing display technologies. Among these advantages are display transparency, imaging of infrared and visible light on the [...]

Thermal Noise and Bit Error Rate Limits in Nanoscale Memories

Forbes L., Mudrow M., Wanalertlak W., Oregon State University, US

Analysis of the effects of thermal noise in nanoscale memories is presented. A theoretical analysis of thermal noise is used to predict the number of bit errors per year caused by thermal noise.

Solar-Blind Dual-Band UV/IR Photodetectors Integrated on a Single Chip

Starikov D., Boney C., Pillai R., Bensaoula A., Integrated Micro Sensors Inc., US

Currently used flame detectors that are composed of discrete UV and IR solid-state components are bulky, sustain temperatures only below 125°C, and are not capable of detecting a multi-band optical signal with high spatial resolution. [...]

Theoretical Model for the Nanobundle Network Transistors Below and Above Percolation Limit

Pimparkar N., Guo J., Alam M.A., Purdue University, US

Recently, a lot of interest has been generated in the area of Macroelectronics with applications such as displays, chemical/biological sensors, photovoltaics and power electronics. Nanobundle network transistors (NBTs) have emerged as a viable, higher performance [...]

A Defect Model for Metallic Carbon Nanotubes in Cell-based Logic Circuits

Hashempour H., Lombardi F., Northeastern University, US

Carbon Nanotube based Field Effect Transistors (CNTFET) are promising nano scaled devices for implementing high performance, highly integrated, and low power circuits. The main component of a CNTFET is a single-wall carbon nanotube (SWCNT); its [...]

Fluidic Nanoelectronics and Brownian Dyanmics

Lyshevski M.A., Lyshevski S.E., Lyshevski M.A., Lyshevski S.E., Microsystems and Nanotechnologies, US

The fundamentals of Brownian dynamics and it application are examined. In the development of mathematical model for Brownian particle motion, we integrate the asymmetric potential as well as consider stochastic electric, magnetic, hydrodynamic and thermal [...]

Practical nanotechnology in Electronics

Hammer-Fritzinger D., NanoDynamics Inc., US

Nanotechnology has been hailed as the “next wave” to replace CMOS as the process of choice to make logic devices using technologies as diverse as carbon nanotube grids, polymer semiconductors and even “wetware” – ionic/electronic [...]