US – Page 155 – TechConnect Briefs

Fabrication and Characterization of HAR Microfluidic Device to Concentrate Microalgae

Singh V., Nguyen Q., Goettert J., Yemane D., Bargiel J., Lane C., Stephenson F., Louisiana State University, US

Algae are a promising candidate for large-scale production of biofuels, an important source of renewable energy [1]. A significant portion (20-40%) of the cost in the traditional processing comes from concentrating (dewatering) the algae from [...]

Novel MEMS-Based Diffractive Spatial Light Modulator

Woo H., Li S., Cable A.J., Light Blue Optics, Inc., US

This research addresses the development of a unique pixellated diffractive phase spatial light modulator (SLM) that is monolithically integrated onto a CMOS backplane to enable extremely energy-efficient video projection systems suitable for consumer electronics and [...]

An optofluidic device for characterizing the effect of viscosity and density on mass transfer

Lapsley M.I., Nama N., Yazdi S., Huang T.J., Pennsylvania State University, US

In this study, we developed an optofluidic device for analyzing the mass transfer of materials in a microfluidic channel. This device uses refractometry to monitor concentration in contrast to typical methods which use florescent markers. [...]

High Performance Sputtered PZT Film for MEMS applications

Hishinuma Y., Li Y., Birkmeyer J., Fujii T., Naono T., Arakawa T., FUJIFILM Dimatix, US

We have developed a method of forming PZT films on silicon substrates with a high piezoelectric coefficient using RF sputtering. Films have been formed on 6 inch wafers with thickness variation of less than +/-5% [...]

Interfacial Studies of CrSi2/ HfO2 thin films as High k Metal Gate Dielectric layer on SiC devices

Hullavarad N., Hullavarad S., Hullavarad N., Hullavarad S., University of Alaska Fairbanks, US

High k dielectric metal oxide films have attracted much attention as promising candidates in place of SiO2. The use of high –k/metal gate technology will provide cost, performance and power savings. To increase the capacitance [...]

nanoCopper based solder-free electronic assembly material

Zinn A., Stoltenberg R., Lockheed Martin Space Systems Company Adv. Technol. Center, US

The Advanced Technology Center of the Lockheed Martin Corporation developed a copper-based electrical interconnect material that can be processed at 200 °C, dispensed using 75 micron size syringe tips and has shown electrical & thermal [...]

Dynamical Tunneling in the Systems of Double Quantum Dots and Rings

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We are modeling the InAs double QDs and QRs, embedded into the GaAs substrate. For the numerical modeling we apply an effective approach] in which the combined effect of strain, piezoelectricity and interband interactions are [...]

Fabrication and Characterization of of Nanoscale Tellurium Fuses for Long Term Solid State Data Storage

Pearson A.C., Singh B., Linford M.R., Lunt B.M., Davis R.C., Brigham Young University, US

We have fabricated nanoscale tellurium fuses using electron beam lithography for long term data storage applications. The tellurium fuses contain a narrow resistive region(250 nm to 10 micron). Application of a sufficiently high voltage accross [...]

Print Transferrable Large-Area Broadband Membrane Reflectors by Laser Interference Lithography

Seo J.-H., Park J., Zhao D., Yang H., Zhou W., Ju B.K., Ma Z., University of Wisconsin-Madison, US

Large-area broadband reflectors based on photonic crystals can enable a number of optoelectronic and photonics devices. To create nano patterns, nanoimprinting, electron-beam lithography and focused ion beam patterning techniques are commonly used. However, these methods [...]

Improved RF Characteristics of Carbon Nanotube Interconnects with Deposited Tungsten Contacts

Vyas A.A., Madriz F., Kanzaki N., Wilhite P., Tan J., Yamada T., Yang C.Y., Santa Clara University, US

Carbon Nanofibers (CNFs) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) are potential next-generation interconnect materials due to their high current capacity. We designed and fabricated a test structure for RF characterization of CNF interconnects [...]