Papers:
Fabrication of highly ordered vertical GaAs nanowires by inductively coupled plasma etching and their modal analysis
Dhindsa N., Chia A., Boulanger J., Khodadad I., LaPierre R., Walia J., Saini S., University of Waterloo, CA
We present highly ordered vertical gallium arsenide (GaAs) nanowires fabricated by dry etching using various metal mask combinations. A great control on the length, diameter, pitch and facet tapering of the nanowires was achieved. Diameters [...]
Wafer-Scale Planarization using Location Specific Gas Cluster Ion Beam (GCIB) in Advanced CMOS Logic Technology
In sub-14nm advanced CMOS logic technology, controlling wafer-scale planarization or uniformity became tremendously critical. This is mainly due to the CMOS integration scheme where chemical mechanical polishing (CMP) is used to create the transistor gate. [...]
Design and Evaluation of a Highly Stretchable and Conductive Thin Film for Tactile Sensors
Keeping good conductivity at high stretching strain is one of the main requirements for the design of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and [...]
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 978-1-4987-4730-1