Improvement of contact resistance in transparent thin film transistor by applying an Al/SWCNTs bilayer as electrodes


,

Keywords: , ,

SWCNTs have various bandgaps so that they show metal as well as semiconductor characteristic. However, it is difficult to separate the metallic and the semi-conducting SWCNTs. Also, the high contact resistance at the interface between SWCNTs and the channel causes loss of carrier mobility. In this study, we fabricated the Al/SWCNT bilayer electrodes and applied this structure to fabricated transparent thin film transistor (TTFT) for reducing the contact resistance.To evaluate the contact resistance between the In2O3 channel and the SWCNTs electrodes, Transmission Line Method (TLM) was applied and electrical properties were measured.Furthermore, optical property was measured by ultraviolet-visible spectrophotometer.

PDF of paper:


Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2014: Graphene, CNTs, Particles, Films & Composites
Published: June 15, 2014
Pages: 17 - 20
Industry sector: Advanced Materials & Manufacturing
Topics: Carbon Nano Structures & Devices, Graphene & 2D-Materials
ISBN: 978-1-4822-5826-4