Rabie M.A., Haddara Y.M., Carette J.
McMaster University, CA
Keywords: modeling, oxidation, process modeling, SiGe, TCAD
Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both Si and Ge at different rates (Si oxidizes preferentially); and the replacement of Ge in GeO2 by Si. Our model is capable of predicting the oxide thickness, the Si profile in the underlying alloy, and the Ge profile in the oxide. The model is parameterized by three reaction rates, an effective Si-Ge interdiffusivity, and the solubility and diffusivity of oxidant in the oxide. Published values are used wherever available. Model parameters vary with temperature, Ge fraction and ambient. The model shows excellent agreement with published results, with model parameters following trends consistent with the physical phenomena hypothesized. We have been able to model oxidation in wet ambient for a wide range of temperatures, times, and Ge concentrations.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 21 - 24
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Advanced Manufacturing, Nanoelectronics
ISBN: 0-9767985-2-2