R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

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This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 86 - 89
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 0-9728422-8-4